ASML Holding N.V. (NASDAQ: ASML) has provided a timeline for the adoption of its High-NA EUV technology, a critical advancement in semiconductor manufacturing. During the company’s third-quarter earnings call, CEO Christophe Fouquet highlighted that the technology has moved from development to production.
Intel Corp. (NASDAQ: INTC) has exposed more than 1 million wafers using High-NA EUV systems. Fouquet noted that the performance of these wafers meets or exceeds comparable layers patterned using Low-NA EUV. Samsung plans to introduce High-NA EUV into high-volume manufacturing in 2028, while Taiwan Semiconductor Manufacturing Company Ltd. (NYSE: TSM) is aiming for 2030.
ASML also reported that availability across its existing High-NA EUV fleet is approaching 90%. The company anticipates seeing adoption increase node-on-node moving forward. CFO Roger Dassen cautioned that the industry is still in the "very initial ramps" for High-NA, meaning customers will need more tools as they validate the technology across more chip layers.
Separately, ASML is facing capacity pressure across its existing equipment portfolio. The company expects 2027 capacity for low-NA EUV and DUV immersion systems to rise 30% year over year. However, management now expects planned output in both 2027 and 2028 to fall short of customer demand, prompting the company to explore further capacity expansion for 2028.
TSMC has also signaled broader ambitions for the technology by planning to work with ASML on larger EUV photomasks. This initiative targets a 12-inch mask pilot line by 2031 and production in 2033.
